Photodiodes

Precision silicon photodiodes for 0.02-1100 nm region.

 

Specifications (22°C)


 

SPD-1UVHCM* SPD-1UVH*

SPD-8UVH*

SPD-12UVH*

SPD-100UV

 Units

Sensitive area

1 1 8

12

100

mm2

Size

Ø1.2 Ø1.2

Ø3.2

Ø4

10х10

mm

Wavelength range

0.02-1100 0.02-1100

0.02 - 1100

0.02 - 1100

0.02 - 1100

nm

Energy range

1.13 - 60000 1.13 - 60000

1.13 - 60000

1.13 - 60000

1.13 - 60000

eV

Capacitance

≤10 (40V) ≤10 (50V) ≤50 (50V) ≤60 (20V) ≤8000 (0V) pF

Dark current

≤2 (40 V) ≤2 (50 V) ≤20 (50V)

≤50 (20 V)

≤0.2 (10 mV)

nA

Rise time (50 Ohm, 620 nm)

≤1 (40 V) ≤5 (30 V)

≤8 (30 V)

≤8 (20 V)

5000 (0 V)

ns

Package (metal)

SMA ТО-39 **
Ø9.2 х 4.3

**
Ø12.5 х 4.3

ТО-39 **
Ø9.2 х 4.3

**
Ø20 х 4.3

mm

 

SPD-100UV SPD-12UVHS SPD-1UVHSC
SPD-100UV SPD-12UVH SPD-1UVHC

*   - pin photodiode
      ** - anode and cathode are isolated from package
      

 

Typical spectral response

 

 

Package

References

  1. Ivanov E I, et al 1980 Pis’ma Zh. Tekh. Fiz. 6 874-7
  2. H. Niedrig, E.I. Rau / Nucl. Instr. and Meth. in Phys. Res. B 142 (1998) 523±534
  3. Yu.A. Goldberg, V.V. Zabrodsky, O.I. Obolenski et al., Semiconductors 33, 343 (1999)
  4. F Scholze et al, 2006 Metrologia 43
  5. Fast XUV 16 × 16 Array Hybrid Module for Plasma Imaging Applications 
  6. Instruments and Experimental Techniques Vol. 51 №. 5 2008
  7. P.N. Aruev, Yu.M. Kolokolnikov, N.V. Kovalenko, et al, Nucl. Instr. and Meth. A, Volume 603, Issues 1-2, 11 May 2009, Pages 58-61
  8. Zabrodsky V.V.,  Aruev P.N., Sukhanov V.L., Zabrodskaya N.V., Ber B.J., Kasantsev D.Yu., Alekseyev A.G. // Proceeding of the 9th International Symposium on Measurement Technology and Intelligent Instruments (ISMTII-2009 ), St. Petersburg, Russia, 2009

 

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